S8050 SOT-23 Plastic-Encapsulate Transistors

S8050 Datasheet: https://www.datasheets360.com/pdf/8052479511067460011

Tìm hiểu thêm: https://linhkientuancuong.com/danh-muc/linh-kien-dien-tu/transistors/transistors-smd/

Quy cách đóng gói:

1 cuộn nhỏ 20 cái, bán theo cuộn 20 cái

1 cuộn lớn 3000 cái.

S8050  Symbol Parameter Value Unit

VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA
hFE(1) VCE= 1V, IC= 50mA 85 400
DC current gain
hFE(2) VCE= 1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V
Transition frequency fT
VCE= 6V, IC=20mA
f =30MHz
150 MHz

S8050 Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA
hFE(1) VCE= 1V, IC= 50mA 85 400
DC current gain
hFE(2) VCE= 1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V
Transition frequency fT
VCE= 6V, IC=20mA
f =30MHz
150 MHz

S8050